auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.27 EUR |
| 10+ | 1.87 EUR |
| 100+ | 1.46 EUR |
| 500+ | 1.24 EUR |
| 1000+ | 1.01 EUR |
| 2500+ | 0.95 EUR |
| 5000+ | 0.90 EUR |
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Technische Details RD3T075CNTL1 ROHM Semiconductor
Description: MOSFET N-CH 200V 7.5A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc), Rds On (Max) @ Id, Vgs: 325mOhm @ 3.75A, 10V, Power Dissipation (Max): 52W (Tc), Vgs(th) (Max) @ Id: 5.25V @ 1mA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V.
Weitere Produktangebote RD3T075CNTL1 nach Preis ab 1.00 EUR bis 3.19 EUR
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RD3T075CNTL1 | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 200V 7.5A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 325mOhm @ 3.75A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 5.25V @ 1mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V |
auf Bestellung 1452 Stücke: Lieferzeit 10-14 Tag (e) |
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| RD3T075CNTL1 | Hersteller : ROHM SEMICONDUCTOR |
RD3T075CNTL1 SMD N channel transistors |
Produkt ist nicht verfügbar |
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RD3T075CNTL1 | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 200V 7.5A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 325mOhm @ 3.75A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 5.25V @ 1mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V |
Produkt ist nicht verfügbar |