RF081LAM2STR Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 200V 1.1A PMDTM
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 1.1A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 26+ | 0.69 EUR |
| 36+ | 0.5 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.17 EUR |
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Technische Details RF081LAM2STR Rohm Semiconductor
Description: DIODE GEN PURP 200V 1.1A PMDTM, Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 200 V, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: PMDTM, Current - Average Rectified (Io): 1.1A, Technology: Standard, Reverse Recovery Time (trr): 25 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SOD-128, Packaging: Tape & Reel (TR).
Weitere Produktangebote RF081LAM2STR nach Preis ab 0.13 EUR bis 0.7 EUR
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RF081LAM2STR | Hersteller : ROHM Semiconductor |
Rectifiers 200V Vr 1A Io Fast Recovery Diode |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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RF081LAM2STR | Hersteller : Rohm Semiconductor |
Description: DIODE GEN PURP 200V 1.1A PMDTM Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PMDTM Current - Average Rectified (Io): 1.1A Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) |
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