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RF08L6STE25

RF08L6STE25 ROHM Semiconductor

RF08L6S.pdf Hersteller: ROHM Semiconductor
Rectifiers DIODE FAST REC 600V 0.8A SOD-106
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Technische Details RF08L6STE25 ROHM Semiconductor

Description: DIODE GEN PURP 600V 800MA PMDS, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 70 ns, Technology: Standard, Current - Average Rectified (Io): 800mA, Supplier Device Package: PMDS, Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.

Weitere Produktangebote RF08L6STE25

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RF08L6STE25 RF08L6STE25 Hersteller : Rohm Semiconductor RF08L6S.pdf Description: DIODE GEN PURP 600V 800MA PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RF08L6STE25 RF08L6STE25 Hersteller : Rohm Semiconductor RF08L6S.pdf Description: DIODE GEN PURP 600V 800MA PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH