RF1001T2DNZC9 ROHM Semiconductor
| Anzahl | Preis |
|---|---|
| 2+ | 1.57 EUR |
| 10+ | 0.83 EUR |
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Technische Details RF1001T2DNZC9 ROHM Semiconductor
Description: DIODE ARRAY GP 200V 10A TO-220FN, Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 930 mV @ 5 A, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Active, Operating Temperature - Junction: 150°C, Supplier Device Package: TO-220FN, Current - Average Rectified (Io) (per Diode): 10A, Diode Configuration: 1 Pair Common Cathode, Technology: Standard, Reverse Recovery Time (trr): 30 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote RF1001T2DNZC9 nach Preis ab 0.59 EUR bis 1.74 EUR
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RF1001T2DNZC9 | Hersteller : Rohm Semiconductor |
 Description: DIODE ARRAY GP 200V 10A TO-220FNCurrent - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: TO-220FN Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 878 Stücke: Lieferzeit 10-14 Tag (e) |
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