Technische Details RF101L2S-TE25 ROHM
Description: DIODE GEN PURP 200V 1A PMDS, Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 200 V, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: PMDS, Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 25 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AC, SMA, Packaging: Tape & Reel (TR).
Weitere Produktangebote RF101L2S-TE25
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RF101L2STE25 | Hersteller : Rohm Semiconductor |
 Description: DIODE GEN PURP 200V 1A PMDSCurrent - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PMDS Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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RF101L2STE25 | Hersteller : Rohm Semiconductor |
Description: DIODE GEN PURP 200V 1A PMDS Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PMDS Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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RF101L2STE25 | Hersteller : ROHM Semiconductor |
Rectifiers FAST REC 200V 1A |
Produkt ist nicht verfügbar |