RF1K4915696

RF1K4915696 Fairchild Semiconductor


FAIRS43785-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.3A, 5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
auf Bestellung 2500 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
365+1.97 EUR
Mindestbestellmenge: 365
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Technische Details RF1K4915696 Fairchild Semiconductor

Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 6.3A, 5V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V.

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RF1K4915696 RF1K4915696 Hersteller : ONSEMI FAIRS43785-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - RF1K4915696 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: NO
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: NO
usEccn: EAR99
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)