RFD16N02L Harris Corporation


HRISS550-1.pdf?t.download=true&u=5oefqw Hersteller: Harris Corporation
Description: 16A, 20V, 0.022 OHM, N-CHANNEL L
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 16A, 5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: I-PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
auf Bestellung 1793 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
606+0.88 EUR
Mindestbestellmenge: 606
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Technische Details RFD16N02L Harris Corporation

Description: 16A, 20V, 0.022 OHM, N-CHANNEL L, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 16A, 5V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: I-PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V.

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RFD16N02L HRISS550-1.pdf?t.download=true&u=5oefqw
auf Bestellung 4784 Stücke:
Lieferzeit 21-28 Tag (e)