Produkte > HARRIS CORPORATION > RFD20N03SM9A

RFD20N03SM9A Harris Corporation

Name: RFD20N03SM9A
Brand: Harris Corporation
SKU: 12232155-3
Price: 1.38 EUR
Availability: InStock

FAIRS43779-1.pdf?t.download=true&u=5oefqw

Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V

auf Bestellung 4911 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis ohne MwSt
355+	1.38 EUR

Mindestbestellmenge: 355

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Technische Details RFD20N03SM9A Harris Corporation

Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V.

Weitere Produktangebote RFD20N03SM9A

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	RFD20N03SM9A			auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e)
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