RFG60P05+E

Description: MOSFET P-CH 50V 60A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 20 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 215W (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.