Produkte > ROHM SEMICONDUCTOR > RFN1L6STE25
RFN1L6STE25

RFN1L6STE25 ROHM Semiconductor


Hersteller: ROHM Semiconductor
Small Signal Switching Diodes Diode Switching 600V 0.8A
auf Bestellung 1311 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+1.27 EUR
10+1.26 EUR
1500+0.2 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details RFN1L6STE25 ROHM Semiconductor

Description: DIODE GEN PURP 600V 800MA PMDS, Current - Reverse Leakage @ Vr: 1 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 800 mA, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: PMDS, Current - Average Rectified (Io): 800mA, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AC, SMA, Packaging: Tape & Reel (TR).

Weitere Produktangebote RFN1L6STE25

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
RFN1L6STE25 RFN1L6STE25 Rohm Semiconductor Description: DIODE GEN PURP 600V 800MA PMDS
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDS
Current - Average Rectified (Io): 800mA
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RFN1L6STE25 RFN1L6STE25 Rohm Semiconductor Description: DIODE GEN PURP 600V 800MA PMDS
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDS
Current - Average Rectified (Io): 800mA
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RFN1L6STE25
RFN1L6STE25
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 800MA PMDS
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDS
Current - Average Rectified (Io): 800mA
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RFN1L6STE25
RFN1L6STE25
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 800MA PMDS
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDS
Current - Average Rectified (Io): 800mA
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH