RFN1L6STE25 ROHM Semiconductor
auf Bestellung 1324 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 48+ | 1.09 EUR |
| 63+ | 0.84 EUR |
| 104+ | 0.5 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.37 EUR |
| 1500+ | 0.31 EUR |
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Technische Details RFN1L6STE25 ROHM Semiconductor
Description: DIODE GEN PURP 600V 800MA PMDS, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Current - Average Rectified (Io): 800mA, Supplier Device Package: PMDS, Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 800 mA, Current - Reverse Leakage @ Vr: 1 µA @ 600 V.
Weitere Produktangebote RFN1L6STE25
| Foto | Bezeichnung | Hersteller | Beschreibung |
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RFN1L6STE25 | Hersteller : Rohm Semiconductor |
Description: DIODE GEN PURP 600V 800MA PMDS Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 800mA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 800 mA Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
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RFN1L6STE25 | Hersteller : Rohm Semiconductor |
Description: DIODE GEN PURP 600V 800MA PMDS Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 800mA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 800 mA Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
Produkt ist nicht verfügbar |