RFN1L7STE25 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 700V 800MA PMDS
Current - Reverse Leakage @ Vr: 1 µA @ 700 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 700 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDS
Current - Average Rectified (Io): 800mA
Technology: Standard
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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Technische Details RFN1L7STE25 Rohm Semiconductor
Description: DIODE GEN PURP 700V 800MA PMDS, Current - Reverse Leakage @ Vr: 1 µA @ 700 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA, Voltage - DC Reverse (Vr) (Max): 700 V, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: PMDS, Current - Average Rectified (Io): 800mA, Technology: Standard, Reverse Recovery Time (trr): 80 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AC, SMA, Packaging: Tape & Reel (TR).
Weitere Produktangebote RFN1L7STE25
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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RFN1L7STE25 | Rohm Semiconductor |
Description: DIODE GEN PURP 700V 800MA PMDS Packaging: Cut Tape (CT) Reverse Recovery Time (trr): 80 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Current - Reverse Leakage @ Vr: 1 µA @ 700 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA Voltage - DC Reverse (Vr) (Max): 700 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PMDS Current - Average Rectified (Io): 800mA Technology: Standard |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
RFN1L7STE25 | ROHM Semiconductor | Small Signal Switching Diodes Diode Switching 700V 0.8A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| RFN1L7STE25 |
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 700V 800MA PMDS
Packaging: Cut Tape (CT)
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Current - Reverse Leakage @ Vr: 1 µA @ 700 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 700 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDS
Current - Average Rectified (Io): 800mA
Technology: Standard
Description: DIODE GEN PURP 700V 800MA PMDS
Packaging: Cut Tape (CT)
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Current - Reverse Leakage @ Vr: 1 µA @ 700 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 700 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDS
Current - Average Rectified (Io): 800mA
Technology: Standard
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RFN1L7STE25 |
Hersteller: ROHM Semiconductor
Small Signal Switching Diodes Diode Switching 700V 0.8A
Small Signal Switching Diodes Diode Switching 700V 0.8A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH