RFN1L7STE25

RFN1L7STE25 Rohm Semiconductor


Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 700V 800MA PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 700 V
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details RFN1L7STE25 Rohm Semiconductor

Description: DIODE GEN PURP 700V 800MA PMDS, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 80 ns, Technology: Standard, Current - Average Rectified (Io): 800mA, Supplier Device Package: PMDS, Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 700 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA, Current - Reverse Leakage @ Vr: 1 µA @ 700 V.

Weitere Produktangebote RFN1L7STE25

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RFN1L7STE25 RFN1L7STE25 Hersteller : Rohm Semiconductor Description: DIODE GEN PURP 700V 800MA PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 700 V
Produkt ist nicht verfügbar
RFN1L7STE25 RFN1L7STE25 Hersteller : ROHM Semiconductor ROHMS25323_1-2561340.pdf Diodes - General Purpose, Power, Switching Diode Switching 700V 0.8A
Produkt ist nicht verfügbar