RFN20T2DNZC9 ROHM Semiconductor
auf Bestellung 1770 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.89 EUR |
| 10+ | 3.24 EUR |
| 100+ | 2.57 EUR |
| 500+ | 2.18 EUR |
| 1000+ | 1.85 EUR |
| 3000+ | 1.75 EUR |
| 5000+ | 1.7 EUR |
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Technische Details RFN20T2DNZC9 ROHM Semiconductor
Description: DIODE GEN PURP 200V 20A TO220FN, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-220FN, Operating Temperature - Junction: 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 20A.
Weitere Produktangebote RFN20T2DNZC9 nach Preis ab 2.35 EUR bis 4.19 EUR
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RFN20T2DNZC9 | Hersteller : Rohm Semiconductor |
 Description: DIODE GEN PURP 200V 20A TO220FNPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A |
auf Bestellung 956 Stücke: Lieferzeit 10-14 Tag (e) |
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