RFN20TF6SFH ROHM Semiconductor
Hersteller: ROHM SemiconductorDiodes - General Purpose, Power, Switching 600V Vrm 20A Io Recovery Diode
auf Bestellung 696 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 6.27 EUR |
| 10+ | 5.23 EUR |
| 100+ | 4.16 EUR |
| 500+ | 3.54 EUR |
| 1000+ | 2.86 EUR |
| 2000+ | 2.83 EUR |
| 5000+ | 2.78 EUR |
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Technische Details RFN20TF6SFH ROHM Semiconductor
Description: DIODE GEN PURP 600V 20A TO220NFM, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 60 ns, Technology: Standard, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-220NFM, Operating Temperature - Junction: 150°C (Max), Part Status: Not For New Designs, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
Weitere Produktangebote RFN20TF6SFH
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RFN20TF6SFH | Hersteller : Rohm Semiconductor |
Description: DIODE GEN PURP 600V 20A TO220NFM Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
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