RFN2L6STE25 Rohm
Hersteller: Rohm
Diode Schottky 600V 1.5A Surface Mount PMDS Група товару: Діоди та діодні збірки Од. вим: шт
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Technische Details RFN2L6STE25 Rohm
Description: DIODE GEN PURP 600V 1.5A PMDS, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 1 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 1.5 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: PMDS, Current - Average Rectified (Io): 1.5A, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AC, SMA.
Weitere Produktangebote RFN2L6STE25
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RFN2L6STE25 | Hersteller : Rohm Semiconductor |
Description: DIODE GEN PURP 600V 1.5A PMDS Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PMDS Current - Average Rectified (Io): 1.5A Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA |
Produkt ist nicht verfügbar |
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RFN2L6STE25 | Hersteller : Rohm Semiconductor |
Description: DIODE GEN PURP 600V 1.5A PMDS Current - Reverse Leakage @ Vr: 1 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PMDS Current - Average Rectified (Io): 1.5A Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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RFN2L6STE25 | Hersteller : ROHM Semiconductor | Rectifiers Fast Recovery Diodes |
Produkt ist nicht verfügbar |
