Produkte > ROHM > RFN2L6STE25

RFN2L6STE25 Rohm



Hersteller: Rohm
RFN2L6STE25 Diode Schottky 600V 1.5A Surface Mount PMDS Діоди та діодні збірки
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Technische Details RFN2L6STE25 Rohm

Description: DIODE GEN PURP 600V 1.5A PMDS, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 1 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 1.5 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: PMDS, Current - Average Rectified (Io): 1.5A, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AC, SMA.

Weitere Produktangebote RFN2L6STE25

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RFN2L6STE25 RFN2L6STE25 Rohm Semiconductor Description: DIODE GEN PURP 600V 1.5A PMDS
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDS
Current - Average Rectified (Io): 1.5A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RFN2L6STE25 RFN2L6STE25 Rohm Semiconductor Description: DIODE GEN PURP 600V 1.5A PMDS
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDS
Current - Average Rectified (Io): 1.5A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RFN2L6STE25 RFN2L6STE25 ROHM Semiconductor Rectifiers Fast Recovery Diodes
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RFN2L6STE25
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 1.5A PMDS
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDS
Current - Average Rectified (Io): 1.5A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RFN2L6STE25
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 1.5A PMDS
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDS
Current - Average Rectified (Io): 1.5A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RFN2L6STE25
Hersteller: ROHM Semiconductor
Rectifiers Fast Recovery Diodes
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH