RFN3BGE6STL ROHM Semiconductor
Hersteller: ROHM SemiconductorDiodes - General Purpose, Power, Switching 600V Vrm; 3A Io TO-252 Rec Diode
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Lieferzeit 10-14 Tag (e)
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Technische Details RFN3BGE6STL ROHM Semiconductor
Description: DIODE GEN PURP 600V 3A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: TO-252, Operating Temperature - Junction: 150°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
Weitere Produktangebote RFN3BGE6STL
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RFN3BGE6STL | Hersteller : Rohm Semiconductor |
Description: DIODE GEN PURP 600V 3A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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RFN3BGE6STL | Hersteller : Rohm Semiconductor |
Description: DIODE GEN PURP 600V 3A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
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