RFN3BM2SFHTL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 200V 3A TO252
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q101
Produktrezensionen
Produktbewertung abgeben
Technische Details RFN3BM2SFHTL Rohm Semiconductor
Description: DIODE GEN PURP 200V 3A TO252, Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A, Voltage - DC Reverse (Vr) (Max): 200 V, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: TO-252, Current - Average Rectified (Io): 3A, Technology: Standard, Reverse Recovery Time (trr): 25 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote RFN3BM2SFHTL nach Preis ab 1.12 EUR bis 2.73 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
RFN3BM2SFHTL | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 3A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
auf Bestellung 4900 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
RFN3BM2SFHTL | ROHM Semiconductor |
Diodes - General Purpose, Power, Switching 200V Vrm 3A Io Recovery Diode |
auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RFN3BM2SFHTL |
|
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 200V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.56 EUR |
| 11+ | 2.08 EUR |
| 100+ | 1.62 EUR |
| 500+ | 1.38 EUR |
| 1000+ | 1.12 EUR |
| RFN3BM2SFHTL |
|
Hersteller: ROHM Semiconductor
Diodes - General Purpose, Power, Switching 200V Vrm 3A Io Recovery Diode
Diodes - General Purpose, Power, Switching 200V Vrm 3A Io Recovery Diode
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.73 EUR |
| 10+ | 2.39 EUR |
| 100+ | 1.84 EUR |
| 500+ | 1.52 EUR |
| 1000+ | 1.2 EUR |
| 2500+ | 1.17 EUR |
| 5000+ | 1.15 EUR |