RFN3BM6SFHTL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 3A TO252
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Technische Details RFN3BM6SFHTL Rohm Semiconductor
Description: DIODE GEN PURP 600V 3A TO252, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: TO-252, Current - Average Rectified (Io): 3A, Technology: Standard, Reverse Recovery Time (trr): 30 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote RFN3BM6SFHTL nach Preis ab 0.75 EUR bis 1.8 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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RFN3BM6SFHTL | ROHM Semiconductor |
Diodes - General Purpose, Power, Switching Fast Recvry 600V Vr TO-252(DPAK) 3A Io |
auf Bestellung 1193 Stücke: Lieferzeit 10-14 Tag (e) |
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RFN3BM6SFHTL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 3A TO252Supplier Device Package: TO-252 Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: 150°C (Max) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| RFN3BM6SFHTL |
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Hersteller: ROHM Semiconductor
Diodes - General Purpose, Power, Switching Fast Recvry 600V Vr TO-252(DPAK) 3A Io
Diodes - General Purpose, Power, Switching Fast Recvry 600V Vr TO-252(DPAK) 3A Io
auf Bestellung 1193 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.75 EUR |
| 10+ | 1.54 EUR |
| 100+ | 1.2 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.8 EUR |
| 2500+ | 0.76 EUR |
| 5000+ | 0.75 EUR |
| RFN3BM6SFHTL |
![]() |
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 3A TO252
Supplier Device Package: TO-252
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Description: DIODE GEN PURP 600V 3A TO252
Supplier Device Package: TO-252
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.8 EUR |
| 15+ | 1.46 EUR |
| 100+ | 1.14 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.79 EUR |


