RFNL10BGE6STL ROHM Semiconductor
auf Bestellung 2073 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.91 EUR |
| 10+ | 2.59 EUR |
| 100+ | 1.8 EUR |
| 500+ | 1.43 EUR |
| 1000+ | 1.3 EUR |
| 2500+ | 1.2 EUR |
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Technische Details RFNL10BGE6STL ROHM Semiconductor
Description: DIODE STANDARD 600V 10A TO252GE, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150 ns, Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-252GE, Operating Temperature - Junction: 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
Weitere Produktangebote RFNL10BGE6STL nach Preis ab 1.32 EUR bis 4.1 EUR
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RFNL10BGE6STL | Hersteller : Rohm Semiconductor |
 Description: DIODE STANDARD 600V 10A TO252GEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
auf Bestellung 2265 Stücke: Lieferzeit 10-14 Tag (e) |
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RFNL10BGE6STL | Hersteller : Rohm Semiconductor |
Description: DIODE STANDARD 600V 10A TO252GE Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
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