RFP10P12 Harris Corporation

Description: P-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 75W (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk.