Technische Details RFP30P06 FSC
Description: MOSFET P-CH 60V 30A TO220-3, Rds On (Max) @ Id, Vgs: 65mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 20 V, Drain to Source Voltage (Vdss): 60 V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4V @ 250µA.
Weitere Produktangebote RFP30P06
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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RFP30P06 | onsemi |
 Description: MOSFET P-CH 60V 30A TO220-3Rds On (Max) @ Id, Vgs: 65mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 20 V Drain to Source Voltage (Vdss): 60 V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
RFP30P06 | onsemi / Fairchild |
MOSFET TO-247 P-Ch Power |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| RFP30P06 |
|
Hersteller: onsemi
Description: MOSFET P-CH 60V 30A TO220-3
Rds On (Max) @ Id, Vgs: 65mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 20 V
Drain to Source Voltage (Vdss): 60 V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Description: MOSFET P-CH 60V 30A TO220-3
Rds On (Max) @ Id, Vgs: 65mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 20 V
Drain to Source Voltage (Vdss): 60 V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RFP30P06 |
|
Hersteller: onsemi / Fairchild
MOSFET TO-247 P-Ch Power
MOSFET TO-247 P-Ch Power
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH