RFUH10TB4SNZC9 ROHM Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 3.47 EUR |
| 10+ | 2.22 EUR |
| 100+ | 1.54 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.02 EUR |
| 2000+ | 0.96 EUR |
| 5000+ | 0.94 EUR |
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Technische Details RFUH10TB4SNZC9 ROHM Semiconductor
Description: DIODE STANDARD 430V 10A TO220NFM, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220NFM, Operating Temperature - Junction: 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 430 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 430 V.
Weitere Produktangebote RFUH10TB4SNZC9 nach Preis ab 1.54 EUR bis 3.54 EUR
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RFUH10TB4SNZC9 | Hersteller : Rohm Semiconductor |
 Description: DIODE STANDARD 430V 10A TO220NFMPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 430 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 430 V |
auf Bestellung 406 Stücke: Lieferzeit 10-14 Tag (e) |
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