RFUH20TB4S Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: DIODE GEN PURP 430V 20A TO220FN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 430 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 430 V
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Technische Details RFUH20TB4S Rohm Semiconductor
Description: DIODE GEN PURP 430V 20A TO220FN, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-220FN, Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 430 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A, Current - Reverse Leakage @ Vr: 10 µA @ 430 V.
Weitere Produktangebote RFUH20TB4S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| RFUH20TB4S | Hersteller : ROHM Semiconductor |
Diodes - General Purpose, Power, Switching 430V Vrm 20A Io Recovery Diode |
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