Technische Details RGCL80TS60DGC11 ROHM Semiconductor
Description: IGBT TRNCH FIELD 600V 65A TO247N, Power - Max: 148 W, Current - Collector Pulsed (Icm): 160 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 65 A, Gate Charge: 98 nC, Test Condition: 400V, 40A, 10Ohm, 15V, Switching Energy: 1.11mJ (on), 1.68mJ (off), Td (on/off) @ 25°C: 53ns/227ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247N, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A, Reverse Recovery Time (trr): 58 ns, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk.
Weitere Produktangebote RGCL80TS60DGC11
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RGCL80TS60DGC11 | Hersteller : Rohm Semiconductor |
 Description: IGBT TRNCH FIELD 600V 65A TO247NPower - Max: 148 W Current - Collector Pulsed (Icm): 160 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 65 A Gate Charge: 98 nC Test Condition: 400V, 40A, 10Ohm, 15V Switching Energy: 1.11mJ (on), 1.68mJ (off) Td (on/off) @ 25°C: 53ns/227ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Reverse Recovery Time (trr): 58 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
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| RGCL80TS60DGC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 74W; TO247-3 Mounting: THT Kind of package: tube Gate charge: 98nC Turn-on time: 114ns Turn-off time: 565ns Collector current: 40A Gate-emitter voltage: ±30V Power dissipation: 74W Pulsed collector current: 160A Collector-emitter voltage: 600V Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Case: TO247-3 |
Produkt ist nicht verfügbar |