RGE60TS65DGC13 ROHM Semiconductor
Hersteller: ROHM SemiconductorIGBTs 5 s Short-Circuit Tolerance, 650V 30A, FRD Built-in, TO-247GE, Field Stop Trench IGBT
auf Bestellung 590 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.28 EUR |
| 10+ | 7.52 EUR |
| 100+ | 6.09 EUR |
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Technische Details RGE60TS65DGC13 ROHM Semiconductor
Description: 5S SHORT-CIRCUIT TOLERANCE, 650V, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 166 ns, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A, Supplier Device Package: TO-247GE, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 40ns/114ns, Switching Energy: 640µJ (on), 570µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 63 nC, Current - Collector (Ic) (Max): 51 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 166 W.
Weitere Produktangebote RGE60TS65DGC13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| RGE60TS65DGC13 | Hersteller : Rohm Semiconductor |
Description: 5S SHORT-CIRCUIT TOLERANCE, 650V Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 166 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A Supplier Device Package: TO-247GE IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 40ns/114ns Switching Energy: 640µJ (on), 570µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 63 nC Current - Collector (Ic) (Max): 51 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 166 W |
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