RGL34D-E3/98 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 500MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GP 200V 500MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.35 EUR |
5000+ | 0.34 EUR |
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Produktbewertung abgeben
Technische Details RGL34D-E3/98 Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 500MA DO213AA, Packaging: Tape & Reel (TR), Package / Case: DO-213AA (Glass), Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150 ns, Technology: Standard, Capacitance @ Vr, F: 4pF @ 4V, 1MHz, Current - Average Rectified (Io): 500mA, Supplier Device Package: DO-213AA (GL34), Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
Weitere Produktangebote RGL34D-E3/98 nach Preis ab 0.31 EUR bis 1.07 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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RGL34D-E3/98 | Hersteller : Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 200V 500mA ORANGE |
auf Bestellung 6682 Stücke: Lieferzeit 14-28 Tag (e) |
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RGL34D-E3/98 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 200V 500MA DO213AA Packaging: Cut Tape (CT) Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 8781 Stücke: Lieferzeit 21-28 Tag (e) |
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RGL34D-E3/98 | Hersteller : Vishay | Diode Switching 200V 0.5A 2-Pin DO-213AA T/R |
Produkt ist nicht verfügbar |
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RGL34D-E3/98 | Hersteller : Vishay | Diode Switching 200V 0.5A 2-Pin DO-213AA T/R |
Produkt ist nicht verfügbar |
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RGL34D-E3/98 | Hersteller : Vishay | Diode Switching 200V 0.5A 2-Pin DO-213AA T/R |
Produkt ist nicht verfügbar |
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RGL34D-E3/98 | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 0.5A; 150ns; DO213AA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 0.5A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 4pF Case: DO213AA Max. forward voltage: 1.3V Max. forward impulse current: 10A Leakage current: 50µA Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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RGL34D-E3/98 | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 0.5A; 150ns; DO213AA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 0.5A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 4pF Case: DO213AA Max. forward voltage: 1.3V Max. forward impulse current: 10A Leakage current: 50µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |