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Technische Details RGP25M-E3/54 Vishay
Description: DIODE GEN PURP 1KV 2.5A DO201AD, Packaging: Tape & Reel (TR), Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 500 ns, Technology: Standard, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Current - Average Rectified (Io): 2.5A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V.
Weitere Produktangebote RGP25M-E3/54 nach Preis ab 0.17 EUR bis 2.08 EUR
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RGP25M-E3/54 | Vishay |
 Diode Switching 1KV 2.5A 2-Pin Case C-16 T/R |
auf Bestellung 2800 Stücke: Lieferzeit 14-21 Tag (e) |
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RGP25M-E3/54 | Vishay |
Diode Switching 1KV 2.5A 2-Pin Case C-16 T/R |
auf Bestellung 3111 Stücke: Lieferzeit 14-21 Tag (e) |
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RGP25M-E3/54 | Vishay |
Diode Switching 1KV 2.5A 2-Pin Case C-16 T/R |
auf Bestellung 2800 Stücke: Lieferzeit 14-21 Tag (e) |
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RGP25M-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 2.5A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 2.5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 1400 Stücke: Lieferzeit 10-14 Tag (e) |
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RGP25M-E3/54 | Vishay General Semiconductor |
Rectifiers 1000 Volt 2.5A 500ns 100 Amp IFSM |
auf Bestellung 1514 Stücke: Lieferzeit 10-14 Tag (e) |
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RGP25M-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 2.5A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 2.5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 2610 Stücke: Lieferzeit 10-14 Tag (e) |
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| RGP25M-E3/54 |
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Hersteller: Vishay
Diode Switching 1KV 2.5A 2-Pin Case C-16 T/R
Diode Switching 1KV 2.5A 2-Pin Case C-16 T/R
auf Bestellung 2800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1400+ | 0.17 EUR |
| RGP25M-E3/54 |
|
Hersteller: Vishay
Diode Switching 1KV 2.5A 2-Pin Case C-16 T/R
Diode Switching 1KV 2.5A 2-Pin Case C-16 T/R
auf Bestellung 3111 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1400+ | 0.2 EUR |
| RGP25M-E3/54 |
|
Hersteller: Vishay
Diode Switching 1KV 2.5A 2-Pin Case C-16 T/R
Diode Switching 1KV 2.5A 2-Pin Case C-16 T/R
auf Bestellung 2800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1400+ | 0.2 EUR |
| RGP25M-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 2.5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 2.5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1400+ | 0.91 EUR |
| RGP25M-E3/54 |
|
Hersteller: Vishay General Semiconductor
Rectifiers 1000 Volt 2.5A 500ns 100 Amp IFSM
Rectifiers 1000 Volt 2.5A 500ns 100 Amp IFSM
auf Bestellung 1514 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.95 EUR |
| 10+ | 0.91 EUR |
| 1400+ | 0.81 EUR |
| 2800+ | 0.77 EUR |
| RGP25M-E3/54 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 2.5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 2.5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 2610 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.08 EUR |
| 11+ | 1.69 EUR |
| 100+ | 1.31 EUR |
| 500+ | 1.11 EUR |