RGPR30BM40HRTL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: IGBT 430V 30A IGNITION TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A
Supplier Device Package: TO-252
Td (on/off) @ 25°C: 500ns/4µs
Test Condition: 300V, 8A, 100Ohm, 5V
Gate Charge: 22 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Power - Max: 125 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.89 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RGPR30BM40HRTL Rohm Semiconductor
Description: IGBT 430V 30A IGNITION TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A, Supplier Device Package: TO-252, Td (on/off) @ 25°C: 500ns/4µs, Test Condition: 300V, 8A, 100Ohm, 5V, Gate Charge: 22 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 430 V, Power - Max: 125 W, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote RGPR30BM40HRTL nach Preis ab 1.92 EUR bis 4.19 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
RGPR30BM40HRTL | Hersteller : Rohm Semiconductor |
Description: IGBT 430V 30A IGNITION TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A Supplier Device Package: TO-252 Td (on/off) @ 25°C: 500ns/4µs Test Condition: 300V, 8A, 100Ohm, 5V Gate Charge: 22 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 430 V Power - Max: 125 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4960 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
RGPR30BM40HRTL | Hersteller : ROHM Semiconductor |
IGBT Transistors 400V 30A 1.6V Vce Ignition IGBT |
auf Bestellung 13988 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
|
RGPR30BM40HRTL Produktcode: 194391 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
|
|||||||||||||||||||
| RGPR30BM40HRTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 430V; 30A; 125W; TO252 Type of transistor: IGBT Collector-emitter voltage: 430V Collector current: 30A Power dissipation: 125W Case: TO252 Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Turn-on time: 1µs Turn-off time: 9.5µs Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: automotive industry; ignition systems Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| RGPR30BM40HRTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 430V; 30A; 125W; TO252 Type of transistor: IGBT Collector-emitter voltage: 430V Collector current: 30A Power dissipation: 125W Case: TO252 Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Turn-on time: 1µs Turn-off time: 9.5µs Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: automotive industry; ignition systems |
Produkt ist nicht verfügbar |