Technische Details RGS30TSX2DGC11 Rohm Semiconductor
Description: IGBT TRENCH FLD 1200V 30A TO247N, Power - Max: 267 W, Current - Collector Pulsed (Icm): 45 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 30 A, Gate Charge: 41 nC, Test Condition: 600V, 15A, 10Ohm, 15V, Switching Energy: 740µJ (on), 600µJ (off), Td (on/off) @ 25°C: 30ns/70ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247N, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A, Reverse Recovery Time (trr): 157 ns, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote RGS30TSX2DGC11 nach Preis ab 7.98 EUR bis 18.81 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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RGS30TSX2DGC11 | Rohm Semiconductor |
 Trans IGBT Chip N-CH 1200V 30A 267W 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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RGS30TSX2DGC11 | ROHM Semiconductor |
IGBTs 10 s Short-Circuit Tolerance, 1200V 15A, FRD Built-in, Field Stop Trench IGBT |
auf Bestellung 487 Stücke: Lieferzeit 10-14 Tag (e) |
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RGS30TSX2DGC11 | Rohm Semiconductor |
Description: IGBT TRENCH FLD 1200V 30A TO247N Power - Max: 267 W Current - Collector Pulsed (Icm): 45 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 30 A Gate Charge: 41 nC Test Condition: 600V, 15A, 10Ohm, 15V Switching Energy: 740µJ (on), 600µJ (off) Td (on/off) @ 25°C: 30ns/70ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Reverse Recovery Time (trr): 157 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 215 Stücke: Lieferzeit 10-14 Tag (e) |
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RGS30TSX2DGC11 | ROHM |
Description: ROHM - RGS30TSX2DGC11 - IGBT, 30 A, 1.7 V, 267 W, 1.2 kV, TO-247N, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Kollektor-Emitter-Sättigungsspannung: 1.7V MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 267W Bauform - Transistor: TO-247N Dauerkollektorstrom: 30A Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: No Betriebstemperatur, max.: 175°C SVHC: Lead (23-Jan-2024) |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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| RGS30TSX2DGC11 |
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Hersteller: Rohm Semiconductor
Trans IGBT Chip N-CH 1200V 30A 267W 3-Pin(3+Tab) TO-247N Tube
Trans IGBT Chip N-CH 1200V 30A 267W 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 10.66 EUR |
| 20+ | 8.91 EUR |
| RGS30TSX2DGC11 |
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Hersteller: ROHM Semiconductor
IGBTs 10 s Short-Circuit Tolerance, 1200V 15A, FRD Built-in, Field Stop Trench IGBT
IGBTs 10 s Short-Circuit Tolerance, 1200V 15A, FRD Built-in, Field Stop Trench IGBT
auf Bestellung 487 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.59 EUR |
| 10+ | 11.33 EUR |
| 100+ | 7.98 EUR |
| RGS30TSX2DGC11 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 1200V 30A TO247N
Power - Max: 267 W
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 30 A
Gate Charge: 41 nC
Test Condition: 600V, 15A, 10Ohm, 15V
Switching Energy: 740µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 30ns/70ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Reverse Recovery Time (trr): 157 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRENCH FLD 1200V 30A TO247N
Power - Max: 267 W
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 30 A
Gate Charge: 41 nC
Test Condition: 600V, 15A, 10Ohm, 15V
Switching Energy: 740µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 30ns/70ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Reverse Recovery Time (trr): 157 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 215 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.92 EUR |
| 10+ | 11.54 EUR |
| RGS30TSX2DGC11 |
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Hersteller: ROHM
Description: ROHM - RGS30TSX2DGC11 - IGBT, 30 A, 1.7 V, 267 W, 1.2 kV, TO-247N, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.7V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 267W
Bauform - Transistor: TO-247N
Dauerkollektorstrom: 30A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: Lead (23-Jan-2024)
Description: ROHM - RGS30TSX2DGC11 - IGBT, 30 A, 1.7 V, 267 W, 1.2 kV, TO-247N, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.7V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 267W
Bauform - Transistor: TO-247N
Dauerkollektorstrom: 30A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: Lead (23-Jan-2024)
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 18.81 EUR |
| 16+ | 14.73 EUR |
| 20+ | 11.06 EUR |
| 50+ | 10.73 EUR |