RGS40NL65DHRBTL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: 8S SHORT-CIRCUIT TOLERANCE, 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-263L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/87ns
Switching Energy: 560µJ (on), 490µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 28 nC
Grade: Automotive
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 177 W
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 3.83 EUR |
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Technische Details RGS40NL65DHRBTL Rohm Semiconductor
Description: 8S SHORT-CIRCUIT TOLERANCE, 650V, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 93 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A, Supplier Device Package: TO-263L, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 24ns/87ns, Switching Energy: 560µJ (on), 490µJ (off), Test Condition: 400V, 20A, 10Ohm, 15V, Gate Charge: 28 nC, Grade: Automotive, Current - Collector (Ic) (Max): 42 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 177 W, Qualification: AEC-Q101.
Weitere Produktangebote RGS40NL65DHRBTL nach Preis ab 2.88 EUR bis 9.2 EUR
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RGS40NL65DHRBTL | Hersteller : Rohm Semiconductor |
Description: 8S SHORT-CIRCUIT TOLERANCE, 650V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 93 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-263L IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 24ns/87ns Switching Energy: 560µJ (on), 490µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 28 nC Grade: Automotive Current - Collector (Ic) (Max): 42 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 177 W Qualification: AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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RGS40NL65DHRBTL | Hersteller : ROHM Semiconductor |
IGBT Transistors 8 s Short-Circuit Tolerance, 650V 20A, FRD Built-in, Automotive Field Stop Trench IGBT: RGS40NL65DHRB is a 8 s SCSOA guaranteed IGBT, suitable for general inverter for automotive and industrial use. This product complies AEC-Q101 qualific |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RGS40NL65DHRBTL | Hersteller : Rohm Semiconductor |
Trans IGBT Chip N-CH 650V 42A 177W Automotive 3-Pin(2+Tab) LPDL |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| RGS40NL65DHRBTL | Hersteller : Rohm Semiconductor |
Trans IGBT Chip N-CH 650V 42A 177W Automotive 3-Pin(2+Tab) LPDL |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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