RGSX5TS65DHRC11 ROHM
Hersteller: ROHM
Description: ROHM - RGSX5TS65DHRC11 - IGBT, 114 A, 1.7 V, 404 W, 650 V, TO-247N, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.7V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 404W
Bauform - Transistor: TO-247N
Dauerkollektorstrom: 114A
Anzahl der Pins: 3Pin(s)
Produktpalette: Trench
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: Lead (23-Jan-2024)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 20.67 EUR |
| 16+ | 15.34 EUR |
| 21+ | 10.58 EUR |
| 50+ | 9.81 EUR |
| 100+ | 9.02 EUR |
| 250+ | 8.84 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
13 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details RGSX5TS65DHRC11 ROHM
Description: IGBT TRENCH FS 650V 114A TO-247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 114 ns, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 43ns/113ns, Switching Energy: 3.32mJ (on), 1.9mJ (off), Test Condition: 400V, 75A, 10Ohm, 15V, Gate Charge: 79 nC, Current - Collector (Ic) (Max): 114 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 225 A, Power - Max: 404 W.
Weitere Produktangebote RGSX5TS65DHRC11 nach Preis ab 11.13 EUR bis 22.05 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RGSX5TS65DHRC11 | ROHM Semiconductor |
IGBTs 8 s Short-Circuit Tolerance, 650V 75A, FRD Built-in, Automotive Field Stop Trench IGBT |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
 |
RGSX5TS65DHRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 114A TO-247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 114 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 43ns/113ns Switching Energy: 3.32mJ (on), 1.9mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 79 nC Current - Collector (Ic) (Max): 114 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 225 A Power - Max: 404 W |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
| RGSX5TS65DHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 650V; 114A; 404W; TO247-3; Eoff: 1.9mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 114A Power dissipation: 404W Case: TO247-3 Gate-emitter voltage: ±30V Mounting: THT Gate charge: 79nC Turn-on time: 43ns Turn-off switching energy: 1.9mJ Turn-on switching energy: 3.32mJ Technology: Field Stop; Trench |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 12 Stücke Im Einkaufswagen Stück im Wert von UAH |
| RGSX5TS65DHRC11 |
|
Hersteller: ROHM Semiconductor
IGBTs 8 s Short-Circuit Tolerance, 650V 75A, FRD Built-in, Automotive Field Stop Trench IGBT
IGBTs 8 s Short-Circuit Tolerance, 650V 75A, FRD Built-in, Automotive Field Stop Trench IGBT
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.6 EUR |
| 10+ | 12.92 EUR |
| 100+ | 11.13 EUR |
| RGSX5TS65DHRC11 |
|
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 114A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.32mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
Description: IGBT TRENCH FS 650V 114A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.32mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.05 EUR |
| 30+ | 13.19 EUR |
| 120+ | 11.23 EUR |
| RGSX5TS65DHRC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 650V; 114A; 404W; TO247-3; Eoff: 1.9mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 114A
Power dissipation: 404W
Case: TO247-3
Gate-emitter voltage: ±30V
Mounting: THT
Gate charge: 79nC
Turn-on time: 43ns
Turn-off switching energy: 1.9mJ
Turn-on switching energy: 3.32mJ
Technology: Field Stop; Trench
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 650V; 114A; 404W; TO247-3; Eoff: 1.9mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 114A
Power dissipation: 404W
Case: TO247-3
Gate-emitter voltage: ±30V
Mounting: THT
Gate charge: 79nC
Turn-on time: 43ns
Turn-off switching energy: 1.9mJ
Turn-on switching energy: 3.32mJ
Technology: Field Stop; Trench
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)