RGT16NL65DGTL ROHM Semiconductor
Hersteller: ROHM SemiconductorIGBTs RGT16NL65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
auf Bestellung 872 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.31 EUR |
| 10+ | 3.19 EUR |
| 100+ | 2.34 EUR |
| 500+ | 1.95 EUR |
| 1000+ | 1.88 EUR |
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Technische Details RGT16NL65DGTL ROHM Semiconductor
Description: IGBT TRENCH FS 650V 16A LPDS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 42 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A, Supplier Device Package: LPDS, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 13ns/33ns, Test Condition: 400V, 8A, 10Ohm, 15V, Gate Charge: 21 nC, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 94 W.
Weitere Produktangebote RGT16NL65DGTL nach Preis ab 2.1 EUR bis 5.68 EUR
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RGT16NL65DGTL | Hersteller : Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 16A LPDS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/33ns Test Condition: 400V, 8A, 10Ohm, 15V Gate Charge: 21 nC Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 94 W |
auf Bestellung 999 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT16NL65DGTL | Hersteller : ROHM |
Description: ROHM - RGT16NL65DGTL - IGBT, 16 A, 1.65 V, 94 W, 650 V, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 94W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 16A SVHC: Lead (17-Jan-2023) |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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RGT16NL65DGTL | Hersteller : ROHM |
Description: ROHM - RGT16NL65DGTL - IGBT, 16 A, 1.65 V, 94 W, 650 V, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 94W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 16A SVHC: Lead (17-Jan-2023) |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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| RGT16NL65DGTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 47W; TO263 Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 8A Pulsed collector current: 24A Turn-on time: 27ns Turn-off time: 170ns Type of transistor: IGBT Power dissipation: 47W Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Gate charge: 21nC Mounting: SMD Case: TO263 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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RGT16NL65DGTL | Hersteller : Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 16A LPDS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/33ns Test Condition: 400V, 8A, 10Ohm, 15V Gate Charge: 21 nC Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 94 W |
Produkt ist nicht verfügbar |
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| RGT16NL65DGTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 47W; TO263 Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 8A Pulsed collector current: 24A Turn-on time: 27ns Turn-off time: 170ns Type of transistor: IGBT Power dissipation: 47W Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Gate charge: 21nC Mounting: SMD Case: TO263 |
Produkt ist nicht verfügbar |