RGTH40TS65GC11 ROHM Semiconductor
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.65 EUR |
| 10+ | 4.19 EUR |
| 25+ | 3.94 EUR |
| 100+ | 3.36 EUR |
| 450+ | 2.75 EUR |
| 900+ | 2.29 EUR |
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Technische Details RGTH40TS65GC11 ROHM Semiconductor
Description: IGBT TRENCH FS 650V 40A TO-247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 22ns/73ns, Test Condition: 400V, 20A, 10Ohm, 15V, Gate Charge: 40 nC, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 144 W.
Weitere Produktangebote RGTH40TS65GC11 nach Preis ab 2.39 EUR bis 5.39 EUR
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RGTH40TS65GC11 | Hersteller : Rohm Semiconductor |
 Description: IGBT TRENCH FS 650V 40A TO-247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/73ns Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 40 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 80 A Power - Max: 144 W |
auf Bestellung 272 Stücke: Lieferzeit 10-14 Tag (e) |
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| RGTH40TS65GC11 | Hersteller : ROHM SEMICONDUCTOR |
RGTH40TS65GC11 THT IGBT transistors |
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