RGTH60TS65DGC13 Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 33+ | 5.53 EUR |
| 50+ | 5.25 EUR |
| 100+ | 4.95 EUR |
| 250+ | 4.7 EUR |
| 500+ | 4.5 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
33 Stücke
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Technische Details RGTH60TS65DGC13 Rohm Semiconductor
Description: IGBT TRENCH FS 650V 58A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 58 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A, Supplier Device Package: TO-247, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 27ns/105ns, Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 58 nC, Current - Collector (Ic) (Max): 58 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 194 W.
Weitere Produktangebote RGTH60TS65DGC13 nach Preis ab 4.5 EUR bis 12.96 EUR
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RGTH60TS65DGC13 | Rohm Semiconductor |
 Trans IGBT Chip N-CH 650V 58A 194W 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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RGTH60TS65DGC13 | ROHM Semiconductor |
IGBTs TO247 650V 30A TRNCH |
auf Bestellung 965 Stücke: Lieferzeit 10-14 Tag (e) |
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RGTH60TS65DGC13 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 58A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: TO-247 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/105ns Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 58 nC Current - Collector (Ic) (Max): 58 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 194 W |
auf Bestellung 566 Stücke: Lieferzeit 10-14 Tag (e) |
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| RGTH60TS65DGC13 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 650V; 58A; 194W Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 58A Power dissipation: 194W Mounting: THT Gate charge: 58nC Turn-on time: 27ns Technology: Field Stop; Trench |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 22 Stücke Im Einkaufswagen Stück im Wert von UAH |
| RGTH60TS65DGC13 |
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Hersteller: Rohm Semiconductor
Trans IGBT Chip N-CH 650V 58A 194W 3-Pin(3+Tab) TO-247N Tube
Trans IGBT Chip N-CH 650V 58A 194W 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 9.97 EUR |
| 35+ | 5.13 EUR |
| 100+ | 4.5 EUR |
| RGTH60TS65DGC13 |
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Hersteller: ROHM Semiconductor
IGBTs TO247 650V 30A TRNCH
IGBTs TO247 650V 30A TRNCH
auf Bestellung 965 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.82 EUR |
| 10+ | 7.35 EUR |
| 100+ | 6.14 EUR |
| 600+ | 5.55 EUR |
| RGTH60TS65DGC13 |
|
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 58A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/105ns
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 58 nC
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 194 W
Description: IGBT TRENCH FS 650V 58A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/105ns
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 58 nC
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 194 W
auf Bestellung 566 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.96 EUR |
| 30+ | 7.41 EUR |
| 120+ | 6.2 EUR |
| 510+ | 5.3 EUR |
| RGTH60TS65DGC13 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 650V; 58A; 194W
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 58A
Power dissipation: 194W
Mounting: THT
Gate charge: 58nC
Turn-on time: 27ns
Technology: Field Stop; Trench
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 650V; 58A; 194W
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 58A
Power dissipation: 194W
Mounting: THT
Gate charge: 58nC
Turn-on time: 27ns
Technology: Field Stop; Trench
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)