RGTV00TK65GVC11 ROHM
Hersteller: ROHM
Description: ROHM - RGTV00TK65GVC11 - IGBT, 45 A, 1.5 V, 94 W, 650 V, TO-3PFM, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.5V
MSL: -
Verlustleistung: 94W
SVHC: Lead (23-Jan-2024)
Bauform - Transistor: TO-3PFM
Dauerkollektorstrom: 45A
Anzahl der Pins: 3Pin(s)
Produktpalette: Field Stop Trench RGTV Series
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: No
usEccn: EAR99
Betriebstemperatur, max.: 175°C
Produktrezensionen
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Technische Details RGTV00TK65GVC11 ROHM
Description: IGBT TRENCH FS 650V 45A TO-3PFM, Switching Energy: 1.17mJ (on), 940µJ (off), Td (on/off) @ 25°C: 41ns/142ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-3PFM, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3PFM, SC-93-3, Packaging: Tube, Power - Max: 94 W, Current - Collector Pulsed (Icm): 200 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 45 A, Part Status: Active, Gate Charge: 104 nC, Test Condition: 400V, 50A, 10Ohm, 15V.
Weitere Produktangebote RGTV00TK65GVC11 nach Preis ab 3.42 EUR bis 12.71 EUR
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RGTV00TK65GVC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 45A TO-3PFMSwitching Energy: 1.17mJ (on), 940µJ (off) Td (on/off) @ 25°C: 41ns/142ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PFM Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Packaging: Tube Power - Max: 94 W Current - Collector Pulsed (Icm): 200 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 45 A Part Status: Active Gate Charge: 104 nC Test Condition: 400V, 50A, 10Ohm, 15V |
auf Bestellung 435 Stücke: Lieferzeit 10-14 Tag (e) |
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RGTV00TK65GVC11 | ROHM Semiconductor |
IGBT Transistors 650V 50A TO-3PFM Field Stp Trnch IGBT |
auf Bestellung 400 Stücke: Lieferzeit 10-14 Tag (e) |
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| RGTV00TK65GVC11 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 45A TO-3PFM
Switching Energy: 1.17mJ (on), 940µJ (off)
Td (on/off) @ 25°C: 41ns/142ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Power - Max: 94 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 45 A
Part Status: Active
Gate Charge: 104 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Description: IGBT TRENCH FS 650V 45A TO-3PFM
Switching Energy: 1.17mJ (on), 940µJ (off)
Td (on/off) @ 25°C: 41ns/142ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Power - Max: 94 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 45 A
Part Status: Active
Gate Charge: 104 nC
Test Condition: 400V, 50A, 10Ohm, 15V
auf Bestellung 435 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.63 EUR |
| 30+ | 4.19 EUR |
| 120+ | 3.42 EUR |
| RGTV00TK65GVC11 |
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Hersteller: ROHM Semiconductor
IGBT Transistors 650V 50A TO-3PFM Field Stp Trnch IGBT
IGBT Transistors 650V 50A TO-3PFM Field Stp Trnch IGBT
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.71 EUR |
| 10+ | 10.7 EUR |
| 25+ | 10.36 EUR |
| 100+ | 8.65 EUR |
| 250+ | 8.38 EUR |
| 500+ | 7.69 EUR |
| 1000+ | 6.2 EUR |


