RGTV80TK65DGVC11 ROHM Semiconductor
Hersteller: ROHM Semiconductor
IGBTs 2s Short-Circuit Tolerance, 650V 23A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT
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Technische Details RGTV80TK65DGVC11 ROHM Semiconductor
Description: IGBT TRENCH FS 650V 39A TO-3PFM, Packaging: Tube, Package / Case: TO-3PFM, SC-93-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 101 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A, Supplier Device Package: TO-3PFM, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 39ns/113ns, Switching Energy: 1.02mJ (on), 710µJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 81 nC, Part Status: Active, Current - Collector (Ic) (Max): 39 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 85 W.
Weitere Produktangebote RGTV80TK65DGVC11 nach Preis ab 3.23 EUR bis 7.11 EUR
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RGTV80TK65DGVC11 | Hersteller : Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 39A TO-3PFM Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 101 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 39ns/113ns Switching Energy: 1.02mJ (on), 710µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 81 nC Part Status: Active Current - Collector (Ic) (Max): 39 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 85 W |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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