RGTV80TS65DGC11 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 78A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/113ns
Switching Energy: 1.02mJ (on), 710µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 81 nC
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 234 W
Description: IGBT TRNCH FIELD 650V 78A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/113ns
Switching Energy: 1.02mJ (on), 710µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 81 nC
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 234 W
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 9.93 EUR |
30+ | 7.92 EUR |
120+ | 7.09 EUR |
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Technische Details RGTV80TS65DGC11 Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 78A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 101 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 39ns/113ns, Switching Energy: 1.02mJ (on), 710µJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 81 nC, Current - Collector (Ic) (Max): 78 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 234 W.
Weitere Produktangebote RGTV80TS65DGC11 nach Preis ab 5.4 EUR bis 10 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
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RGTV80TS65DGC11 | Hersteller : ROHM Semiconductor | IGBT Transistors 650V 40A Field Stop Trench IGBT |
auf Bestellung 896 Stücke: Lieferzeit 10-14 Tag (e) |
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RGTV80TS65DGC11 | Hersteller : ROHM |
Description: ROHM - RGTV80TS65DGC11 - IGBT, 78 A, 1.5 V, 234 W, 650 V, TO-247N, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.5V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 234W Bauform - Transistor: TO-247N Anzahl der Pins: 3Pin(s) Produktpalette: Trench Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 78A SVHC: Lead (17-Jan-2023) |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |