RGTVX2TS65DGC11 ROHM Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 12.76 EUR |
| 10+ | 11.53 EUR |
| 30+ | 11 EUR |
| 120+ | 9.54 EUR |
| 510+ | 8.31 EUR |
| 1020+ | 7.32 EUR |
| 2520+ | 7.06 EUR |
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Technische Details RGTVX2TS65DGC11 ROHM Semiconductor
Description: IGBT TRENCH FS 650V 111A TO-247N, Packaging: Tube, Td (on/off) @ 25°C: 49ns/150ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247N, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Power - Max: 319 W, Current - Collector Pulsed (Icm): 240 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 111 A, Gate Charge: 123 nC, Test Condition: 400V, 60A, 10Ohm, 15V, Switching Energy: 2.08mJ (on), 1.15mJ (off).
Weitere Produktangebote RGTVX2TS65DGC11 nach Preis ab 6.02 EUR bis 13.53 EUR
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RGTVX2TS65DGC11 | Hersteller : Rohm Semiconductor |
 Description: IGBT TRENCH FS 650V 111A TO-247NPackaging: Tube Td (on/off) @ 25°C: 49ns/150ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Power - Max: 319 W Current - Collector Pulsed (Icm): 240 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 111 A Gate Charge: 123 nC Test Condition: 400V, 60A, 10Ohm, 15V Switching Energy: 2.08mJ (on), 1.15mJ (off) |
auf Bestellung 530 Stücke: Lieferzeit 10-14 Tag (e) |
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