RGTVX6TS65GC11 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 144A TO247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 320 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 144 A
Gate Charge: 171 nC
Test Condition: 400V, 80A, 10Ohm, 15V
Switching Energy: 2.65mJ (on), 1.8mJ (off)
Td (on/off) @ 25°C: 45ns/201ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 80A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 2+ | 9.12 EUR |
| 30+ | 5.56 EUR |
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Technische Details RGTVX6TS65GC11 Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 144A TO247N, Power - Max: 404 W, Current - Collector Pulsed (Icm): 320 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 144 A, Gate Charge: 171 nC, Test Condition: 400V, 80A, 10Ohm, 15V, Switching Energy: 2.65mJ (on), 1.8mJ (off), Td (on/off) @ 25°C: 45ns/201ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247N, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 80A, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote RGTVX6TS65GC11 nach Preis ab 6.04 EUR bis 12.07 EUR
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RGTVX6TS65GC11 | Hersteller : ROHM Semiconductor |
IGBTs 650V 80A TO-247N Field Stp Trnch IGBT |
auf Bestellung 493 Stücke: Lieferzeit 10-14 Tag (e) |
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