RGW40TS65DGC11 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 40A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/76ns
Switching Energy: 330µJ (on), 300µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 59 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 136 W
Description: IGBT TRNCH FIELD 650V 40A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/76ns
Switching Energy: 330µJ (on), 300µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 59 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 136 W
auf Bestellung 445 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 8.36 EUR |
30+ | 6.62 EUR |
120+ | 5.68 EUR |
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Technische Details RGW40TS65DGC11 Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 40A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 33ns/76ns, Switching Energy: 330µJ (on), 300µJ (off), Test Condition: 400V, 20A, 10Ohm, 15V, Gate Charge: 59 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 136 W.
Weitere Produktangebote RGW40TS65DGC11 nach Preis ab 4.38 EUR bis 8.5 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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RGW40TS65DGC11 | Hersteller : ROHM Semiconductor | IGBT Transistors 650V 20A Field Stop Trench IGBT |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW40TS65DGC11 | Hersteller : ROHM |
Description: ROHM - RGW40TS65DGC11 - IGBT, 40 A, 1.5 V, 136 W, 650 V, TO-247N, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.5V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 136W Bauform - Transistor: TO-247N Anzahl der Pins: 3Pin(s) Produktpalette: Trench Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 40A SVHC: Lead (17-Jan-2023) |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |