RGW50NL65HRBTL ROHM Semiconductor
Hersteller: ROHM Semiconductor
IGBT Transistors High-Speed Fast Switching Type, 650V 25A, LPDL, Field Stop Trench IGBT for Automotive: RGW50NL65HRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inverter
IGBT Transistors High-Speed Fast Switching Type, 650V 25A, LPDL, Field Stop Trench IGBT for Automotive: RGW50NL65HRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inverter
auf Bestellung 2000 Stücke:
Lieferzeit 111-115 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 5.39 EUR |
10+ | 4.52 EUR |
25+ | 4.28 EUR |
100+ | 3.64 EUR |
250+ | 3.45 EUR |
500+ | 3.24 EUR |
1000+ | 2.69 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RGW50NL65HRBTL ROHM Semiconductor
Description: HIGH-SPEED FAST SWITCHING TYPE,, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A, Supplier Device Package: TO-263L, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 31ns/119ns, Switching Energy: 110µJ (on), 230µJ (off), Test Condition: 400V, 12.5A, 10Ohm, 15V, Gate Charge: 73 nC, Grade: Automotive, Current - Collector (Ic) (Max): 57 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 165 W, Qualification: AEC-Q101.
Weitere Produktangebote RGW50NL65HRBTL
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
RGW50NL65HRBTL | Hersteller : Rohm Semiconductor |
Description: HIGH-SPEED FAST SWITCHING TYPE, Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A Supplier Device Package: TO-263L IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 31ns/119ns Switching Energy: 110µJ (on), 230µJ (off) Test Condition: 400V, 12.5A, 10Ohm, 15V Gate Charge: 73 nC Grade: Automotive Current - Collector (Ic) (Max): 57 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 100 A Power - Max: 165 W Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
||
RGW50NL65HRBTL | Hersteller : Rohm Semiconductor |
Description: HIGH-SPEED FAST SWITCHING TYPE, Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A Supplier Device Package: TO-263L IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 31ns/119ns Switching Energy: 110µJ (on), 230µJ (off) Test Condition: 400V, 12.5A, 10Ohm, 15V Gate Charge: 73 nC Grade: Automotive Current - Collector (Ic) (Max): 57 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 100 A Power - Max: 165 W Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |