RGW60TS65CHRC11 ROHM
Hersteller: ROHM
Description: ROHM - RGW60TS65CHRC11 - IGBT, 64 A, 1.5 V, 178 W, 650 V, TO-247N, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.5V
Verlustleistung: 178W
SVHC: Lead (23-Jan-2024)
Bauform - Transistor: TO-247N
Dauerkollektorstrom: 64A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: No
usEccn: EAR99
Betriebstemperatur, max.: 175°C
Produktrezensionen
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Technische Details RGW60TS65CHRC11 ROHM
Description: IGBT 650V 64A TO-247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 34 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A, Supplier Device Package: TO-247N, Td (on/off) @ 25°C: 37ns/91ns, Switching Energy: 70µJ (on), 220µJ (off), Test Condition: 400V, 15A, 10Ohm, 15V, Gate Charge: 84 nC, Current - Collector (Ic) (Max): 64 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 178 W.
Weitere Produktangebote RGW60TS65CHRC11 nach Preis ab 13.48 EUR bis 25.79 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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RGW60TS65CHRC11 | ROHM Semiconductor |
IGBTs High-Speed Fast Switching Type, 650V 30A, Automotive Hybrid IGBT with Built-In SiC-SBD |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW60TS65CHRC11 | Rohm Semiconductor |
Description: IGBT 650V 64A TO-247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-247N Td (on/off) @ 25°C: 37ns/91ns Switching Energy: 70µJ (on), 220µJ (off) Test Condition: 400V, 15A, 10Ohm, 15V Gate Charge: 84 nC Current - Collector (Ic) (Max): 64 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 178 W |
auf Bestellung 342 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RGW60TS65CHRC11 |
|
Hersteller: ROHM Semiconductor
IGBTs High-Speed Fast Switching Type, 650V 30A, Automotive Hybrid IGBT with Built-In SiC-SBD
IGBTs High-Speed Fast Switching Type, 650V 30A, Automotive Hybrid IGBT with Built-In SiC-SBD
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.36 EUR |
| 10+ | 15.46 EUR |
| 100+ | 13.48 EUR |
| RGW60TS65CHRC11 |
|
Hersteller: Rohm Semiconductor
Description: IGBT 650V 64A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
Td (on/off) @ 25°C: 37ns/91ns
Switching Energy: 70µJ (on), 220µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 178 W
Description: IGBT 650V 64A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
Td (on/off) @ 25°C: 37ns/91ns
Switching Energy: 70µJ (on), 220µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 178 W
auf Bestellung 342 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.79 EUR |
| 30+ | 16.23 EUR |