RGW80TK65DGVC11 Rohm Semiconductor

Description: IGBT TRNCH FIELD 650V 39A TO3PFM, Power - Max: 81 W, Current - Collector Pulsed (Icm): 160 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 39 A, Part Status: Active, Gate Charge: 110 nC, Test Condition: 400V, 40A, 10Ohm, 15V, Switching Energy: 760µJ (on), 720µJ (off), Td (on/off) @ 25°C: 44ns/143ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-3PFM, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A, Reverse Recovery Time (trr): 92 ns, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3PFM, SC-93-3, Packaging: Tube.