RGW80TS65CHRC11 ROHM Semiconductor
Hersteller: ROHM Semiconductor
IGBTs High-Speed Fast Switching Type, 650V 40A, Automotive Hybrid IGBT with Built-In SiC-SBD
| Anzahl | Privatkunde |
|---|---|
| 1+ | 26.07 EUR |
| 10+ | 16.54 EUR |
| 450+ | 16.51 EUR |
| 900+ | 15.46 EUR |
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Technische Details RGW80TS65CHRC11 ROHM Semiconductor
Description: IGBT 650V 81A TO-247N, Power - Max: 214 W, Current - Collector Pulsed (Icm): 160 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 81 A, Part Status: Active, Gate Charge: 110 nC, Test Condition: 400V, 20A, 10Ohm, 15V, Switching Energy: 120µJ (on), 340µJ (off), Td (on/off) @ 25°C: 43ns/145ns, Supplier Device Package: TO-247N, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A, Reverse Recovery Time (trr): 33 ns, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote RGW80TS65CHRC11 nach Preis ab 13.92 EUR bis 26.58 EUR
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RGW80TS65CHRC11 | Rohm Semiconductor |
Description: IGBT 650V 81A TO-247N Power - Max: 214 W Current - Collector Pulsed (Icm): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 81 A Part Status: Active Gate Charge: 110 nC Test Condition: 400V, 20A, 10Ohm, 15V Switching Energy: 120µJ (on), 340µJ (off) Td (on/off) @ 25°C: 43ns/145ns Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Reverse Recovery Time (trr): 33 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 357 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW80TS65CHRC11 | ROHM |
Description: ROHM - RGW80TS65CHRC11 - IGBT, 81 A, 1.5 V, 214 W, 650 V, TO-247N, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Kollektor-Emitter-Sättigungsspannung: 1.5V Verlustleistung: 214W SVHC: Lead (23-Jan-2024) Bauform - Transistor: TO-247N Dauerkollektorstrom: 81A Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: No usEccn: EAR99 Betriebstemperatur, max.: 175°C |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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| RGW80TS65CHRC11 |
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Hersteller: Rohm Semiconductor
Description: IGBT 650V 81A TO-247N
Power - Max: 214 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 81 A
Part Status: Active
Gate Charge: 110 nC
Test Condition: 400V, 20A, 10Ohm, 15V
Switching Energy: 120µJ (on), 340µJ (off)
Td (on/off) @ 25°C: 43ns/145ns
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Reverse Recovery Time (trr): 33 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT 650V 81A TO-247N
Power - Max: 214 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 81 A
Part Status: Active
Gate Charge: 110 nC
Test Condition: 400V, 20A, 10Ohm, 15V
Switching Energy: 120µJ (on), 340µJ (off)
Td (on/off) @ 25°C: 43ns/145ns
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Reverse Recovery Time (trr): 33 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 357 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 26.54 EUR |
| 30+ | 16.84 EUR |
| RGW80TS65CHRC11 |
|
Hersteller: ROHM
Description: ROHM - RGW80TS65CHRC11 - IGBT, 81 A, 1.5 V, 214 W, 650 V, TO-247N, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.5V
Verlustleistung: 214W
SVHC: Lead (23-Jan-2024)
Bauform - Transistor: TO-247N
Dauerkollektorstrom: 81A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: No
usEccn: EAR99
Betriebstemperatur, max.: 175°C
Description: ROHM - RGW80TS65CHRC11 - IGBT, 81 A, 1.5 V, 214 W, 650 V, TO-247N, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.5V
Verlustleistung: 214W
SVHC: Lead (23-Jan-2024)
Bauform - Transistor: TO-247N
Dauerkollektorstrom: 81A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: No
usEccn: EAR99
Betriebstemperatur, max.: 175°C
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 26.58 EUR |
| 12+ | 19.88 EUR |
| 16+ | 13.92 EUR |