
RGWS00TS65DGC13 Rohm Semiconductor
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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25+ | 6.36 EUR |
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Technische Details RGWS00TS65DGC13 Rohm Semiconductor
Description: IGBT TRENCH FS 650V 88A TO-247G, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 88 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A, Supplier Device Package: TO-247G, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 46ns/145ns, Switching Energy: 980µJ (on), 910µJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 108 nC, Current - Collector (Ic) (Max): 88 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 245 W.
Weitere Produktangebote RGWS00TS65DGC13 nach Preis ab 3.05 EUR bis 12.23 EUR
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RGWS00TS65DGC13 | Hersteller : Rohm Semiconductor |
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auf Bestellung 115 Stücke: Lieferzeit 14-21 Tag (e) |
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RGWS00TS65DGC13 | Hersteller : ROHM Semiconductor |
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auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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RGWS00TS65DGC13 | Hersteller : Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 88 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Supplier Device Package: TO-247G IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 46ns/145ns Switching Energy: 980µJ (on), 910µJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 108 nC Current - Collector (Ic) (Max): 88 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 245 W |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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