RGWS00TS65DGC13 Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 25+ | 7.65 EUR |
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Technische Details RGWS00TS65DGC13 Rohm Semiconductor
Description: IGBT TRENCH FS 650V 88A TO-247G, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 88 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A, Supplier Device Package: TO-247G, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 46ns/145ns, Switching Energy: 980µJ (on), 910µJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 108 nC, Current - Collector (Ic) (Max): 88 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 245 W.
Weitere Produktangebote RGWS00TS65DGC13 nach Preis ab 3.88 EUR bis 13.95 EUR
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RGWS00TS65DGC13 | Rohm Semiconductor |
 Trans IGBT Chip N-CH 650V 88A 245W 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 115 Stücke: Lieferzeit 14-21 Tag (e) |
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RGWS00TS65DGC13 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 88A TO-247G Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 88 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Supplier Device Package: TO-247G IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 46ns/145ns Switching Energy: 980µJ (on), 910µJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 108 nC Current - Collector (Ic) (Max): 88 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 245 W |
auf Bestellung 565 Stücke: Lieferzeit 10-14 Tag (e) |
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| RGWS00TS65DGC13 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 650V; 88A; 245W; TO247-3; Eoff: 0.91mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 88A Power dissipation: 245W Case: TO247-3 Gate-emitter voltage: ±30V Mounting: THT Gate charge: 108nC Turn-on time: 46ns Turn-off switching energy: 0.91mJ Turn-on switching energy: 0.98mJ Technology: Field Stop; Trench |
auf Bestellung 110 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 23 Stücke Im Einkaufswagen Stück im Wert von UAH |
| RGWS00TS65DGC13 |
|
Hersteller: Rohm Semiconductor
Trans IGBT Chip N-CH 650V 88A 245W 3-Pin(3+Tab) TO-247N Tube
Trans IGBT Chip N-CH 650V 88A 245W 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 8.52 EUR |
| 33+ | 5.37 EUR |
| 50+ | 4.25 EUR |
| 100+ | 3.88 EUR |
| RGWS00TS65DGC13 |
|
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 88A TO-247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 46ns/145ns
Switching Energy: 980µJ (on), 910µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 108 nC
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 245 W
Description: IGBT TRENCH FS 650V 88A TO-247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 46ns/145ns
Switching Energy: 980µJ (on), 910µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 108 nC
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 245 W
auf Bestellung 565 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.95 EUR |
| 30+ | 8.03 EUR |
| 120+ | 6.72 EUR |
| 510+ | 5.77 EUR |
| RGWS00TS65DGC13 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 650V; 88A; 245W; TO247-3; Eoff: 0.91mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 88A
Power dissipation: 245W
Case: TO247-3
Gate-emitter voltage: ±30V
Mounting: THT
Gate charge: 108nC
Turn-on time: 46ns
Turn-off switching energy: 0.91mJ
Turn-on switching energy: 0.98mJ
Technology: Field Stop; Trench
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 650V; 88A; 245W; TO247-3; Eoff: 0.91mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 88A
Power dissipation: 245W
Case: TO247-3
Gate-emitter voltage: ±30V
Mounting: THT
Gate charge: 108nC
Turn-on time: 46ns
Turn-off switching energy: 0.91mJ
Turn-on switching energy: 0.98mJ
Technology: Field Stop; Trench
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)