RGWS80TS65DGC13 Rohm Semiconductor

Description: IGBT TRENCH FS 650V 71A TO247G, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Switching Energy: 700µJ (on), 660µJ (off), Td (on/off) @ 25°C: 40ns/114ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247G, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A, Reverse Recovery Time (trr): 88 ns, Input Type: Standard, Power - Max: 202 W, Current - Collector Pulsed (Icm): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 71 A, Gate Charge: 83 nC, Test Condition: 400V, 40A, 10Ohm, 15V.