auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 13.06 EUR |
| 10+ | 11.81 EUR |
| 30+ | 11.26 EUR |
| 120+ | 9.75 EUR |
| 510+ | 8.5 EUR |
| 1020+ | 7.52 EUR |
| 2520+ | 7.23 EUR |
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Technische Details RGWX5TS65DGC11 ROHM Semiconductor
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 75A; 174W; TO247-3, Mounting: THT, Kind of package: tube, Case: TO247-3, Pulsed collector current: 300A, Turn-on time: 93ns, Turn-off time: 305ns, Type of transistor: IGBT, Power dissipation: 174W, Gate-emitter voltage: ±30V, Collector-emitter voltage: 650V, Collector current: 75A, Features of semiconductor devices: integrated anti-parallel diode, Gate charge: 213nC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote RGWX5TS65DGC11
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| RGWX5TS65DGC11 | Hersteller : ROHM SEMICONDUCTOR |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 174W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 300A Turn-on time: 93ns Turn-off time: 305ns Type of transistor: IGBT Power dissipation: 174W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 75A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 213nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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.jpg "RGWX5TS65DGC11") |
RGWX5TS65DGC11 | Hersteller : Rohm Semiconductor |
Description: IGBT TRENCH FLD 650V 132A TO247N |
Produkt ist nicht verfügbar |
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| RGWX5TS65DGC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 174W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 300A Turn-on time: 93ns Turn-off time: 305ns Type of transistor: IGBT Power dissipation: 174W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 75A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 213nC |
Produkt ist nicht verfügbar |