RGWX5TS65DGC11 ROHM Semiconductor
auf Bestellung 870 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.05 EUR |
| 25+ | 7.23 EUR |
| 100+ | 6.95 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RGWX5TS65DGC11 ROHM Semiconductor
Description: IGBT TRENCH FLD 650V 132A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 101 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 64ns/229ns, Switching Energy: 2.39mJ (on), 1.68mJ (off), Test Condition: 400V, 75A, 10Ohm, 15V, Gate Charge: 213 nC, Current - Collector (Ic) (Max): 132 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 348 W.
Weitere Produktangebote RGWX5TS65DGC11 nach Preis ab 6.46 EUR bis 10.23 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RGWX5TS65DGC11 | Hersteller : Rohm Semiconductor |
 Description: IGBT TRENCH FLD 650V 132A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 101 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 64ns/229ns Switching Energy: 2.39mJ (on), 1.68mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 213 nC Current - Collector (Ic) (Max): 132 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 348 W |
auf Bestellung 400 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
| RGWX5TS65DGC11 | Hersteller : ROHM SEMICONDUCTOR |
RGWX5TS65DGC11 THT IGBT transistors |
Produkt ist nicht verfügbar |