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RJ1U330AAFRGTL

RJ1U330AAFRGTL Rohm Semiconductor

rj1u330aafrgtl-e.pdf Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 250V 33A Automotive 3-Pin(2+Tab) LPTS T/R
auf Bestellung 1070 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+2.22 EUR
75+1.91 EUR
100+1.77 EUR
500+1.59 EUR
1000+1.46 EUR
Mindestbestellmenge: 67
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Technische Details RJ1U330AAFRGTL Rohm Semiconductor

Description: MOSFET N-CH 250V 33A LPTS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Ta), Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V, Power Dissipation (Max): 211W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: LPTS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V.

Weitere Produktangebote RJ1U330AAFRGTL nach Preis ab 3.13 EUR bis 7.22 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RJ1U330AAFRGTL RJ1U330AAFRGTL Hersteller : ROHM Semiconductor datasheet?p=RJ1U330AAFRG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFETs Nch 250V Vds 33A 0.077Rds(on) 80Qg
auf Bestellung 356 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.46 EUR
10+5.42 EUR
25+5.19 EUR
100+3.92 EUR
250+3.91 EUR
500+3.24 EUR
1000+3.13 EUR
Im Einkaufswagen  Stück im Wert von  UAH
RJ1U330AAFRGTL RJ1U330AAFRGTL Hersteller : Rohm Semiconductor datasheet?p=RJ1U330AAFRG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 250V 33A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
auf Bestellung 244 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.22 EUR
10+6.48 EUR
100+5.31 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
RJ1U330AAFRGTL RJ1U330AAFRGTL Hersteller : Rohm Semiconductor datasheet?p=RJ1U330AAFRG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 250V 33A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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