RJ1U330AAFRGTL Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 67+ | 2.62 EUR |
| 75+ | 2.3 EUR |
| 100+ | 2.15 EUR |
| 500+ | 1.98 EUR |
| 1000+ | 1.87 EUR |
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Technische Details RJ1U330AAFRGTL Rohm Semiconductor
Description: MOSFET N-CH 250V 33A LPTS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Ta), Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V, Power Dissipation (Max): 211W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: LPTS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V.
Weitere Produktangebote RJ1U330AAFRGTL nach Preis ab 3.45 EUR bis 9.89 EUR
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RJ1U330AAFRGTL | ROHM Semiconductor |
 MOSFETs Nch 250V Vds 33A 0.077Rds(on) 80Qg |
auf Bestellung 226 Stücke: Lieferzeit 10-14 Tag (e) |
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RJ1U330AAFRGTL | Rohm Semiconductor |
Description: MOSFET N-CH 250V 33A LPTS Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 211W (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 970 Stücke: Lieferzeit 10-14 Tag (e) |
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| RJ1U330AAFRGTL |
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Hersteller: ROHM Semiconductor
MOSFETs Nch 250V Vds 33A 0.077Rds(on) 80Qg
MOSFETs Nch 250V Vds 33A 0.077Rds(on) 80Qg
auf Bestellung 226 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.57 EUR |
| 10+ | 6.01 EUR |
| 100+ | 4.3 EUR |
| 500+ | 4.06 EUR |
| 1000+ | 3.45 EUR |
| RJ1U330AAFRGTL |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 33A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 250V 33A LPTS
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.89 EUR |
| 10+ | 6.56 EUR |
| 100+ | 4.66 EUR |
| 500+ | 4.14 EUR |