RJH1CM5DPQ-E0#T2

RJH1CM5DPQ-E0#T2 Renesas Electronics America Inc


RNCC-S-A0000085730-1.pdf?t.download=true&u=5oefqw Hersteller: Renesas Electronics America Inc
Description: IGBT, 30A, 1200V, N-CHANNEL, TO-
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 40ns/100ns
Switching Energy: 1.6mJ (on), 700µJ (off)
Test Condition: 600V, 15A, 5Ohm, 15V
Gate Charge: 74 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 245 W
auf Bestellung 500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
32+15.96 EUR
Mindestbestellmenge: 32
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Technische Details RJH1CM5DPQ-E0#T2 Renesas Electronics America Inc

Description: IGBT, 30A, 1200V, N-CHANNEL, TO-, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 200 ns, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A, Supplier Device Package: TO-247, Td (on/off) @ 25°C: 40ns/100ns, Switching Energy: 1.6mJ (on), 700µJ (off), Test Condition: 600V, 15A, 5Ohm, 15V, Gate Charge: 74 nC, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 245 W.

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RJH1CM5DPQ-E0#T2 Hersteller : Renesas Electronics r07ds0520ej0800_rjh1cm5dpq-1093050.pdf IGBT Transistors IGBT
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