RJH60D0DPK-00#T0 Renesas
Hersteller: RenesasTO-3/Silicon N Channel IGBT Application: Inverter RJH60
Anzahl je Verpackung: 1 Stücke
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Technische Details RJH60D0DPK-00#T0 Renesas
Description: IGBT TRENCH 600V 45A TO-3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 100 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A, Supplier Device Package: TO-3P, IGBT Type: Trench, Td (on/off) @ 25°C: 40ns/80ns, Switching Energy: 230µJ (on), 290µJ (off), Test Condition: 300V, 22A, 5Ohm, 15V, Gate Charge: 46 nC, Part Status: Active, Current - Collector (Ic) (Max): 45 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 140 W.
Weitere Produktangebote RJH60D0DPK-00#T0
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RJH60D0DPK-00#T0 | Hersteller : Renesas Electronics Corporation |
Description: IGBT TRENCH 600V 45A TO-3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A Supplier Device Package: TO-3P IGBT Type: Trench Td (on/off) @ 25°C: 40ns/80ns Switching Energy: 230µJ (on), 290µJ (off) Test Condition: 300V, 22A, 5Ohm, 15V Gate Charge: 46 nC Part Status: Active Current - Collector (Ic) (Max): 45 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 140 W |
Produkt ist nicht verfügbar |
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| RJH60D0DPK-00#T0 | Hersteller : Renesas Electronics |
IGBT Transistors IGBT |
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