RJH60D0DPM-00#T1

RJH60D0DPM-00#T1 Renesas Electronics Corporation


rjh60d0dpm-datasheet Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 600V 45A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A
Supplier Device Package: TO-3PFM
IGBT Type: Trench
Td (on/off) @ 25°C: 40ns/80ns
Switching Energy: 230µJ (on), 290µJ (off)
Test Condition: 300V, 22A, 5Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 40 W
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Technische Details RJH60D0DPM-00#T1 Renesas Electronics Corporation

Description: IGBT TRENCH 600V 45A TO3PFM, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 100 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A, Supplier Device Package: TO-3PFM, IGBT Type: Trench, Td (on/off) @ 25°C: 40ns/80ns, Switching Energy: 230µJ (on), 290µJ (off), Test Condition: 300V, 22A, 5Ohm, 15V, Gate Charge: 46 nC, Part Status: Active, Current - Collector (Ic) (Max): 45 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 40 W.

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RJH60D0DPM-00#T1 Hersteller : Renesas Electronics REN_r07ds0156ej0300_rjh60d0dpm_DST_20120419-1999316.pdf IGBT Transistors IGBT
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